Specifically, the global market for these two technologies is expected to rise from $210 million in 2015 to more than $1 billion by 2020, then $3.7 billion by 2025.
Historically speaking, SiC Schottky diodes have been on the market for more than a decade, with SiC metal-oxide semiconductor field-effect transistors (MOSFET), junction-gate field-effect transistors (JFET), and bipolar junction transistors (BJT) having all been introduced in recent years.
SiC MOSFETs, in particular, have proven popular among manufacturers, with several presently offering them, and more expecting to do so in the coming year.
Worth noting on this front—the 900V SiC MOSFETs, which is specially priced to compete with silicon SuperJunction MOSFETs, coupled with an expected increase in competition among suppliers, are expected to drive average prices down in the coming year.
“Declining prices will spur faster adoption of the technology,” says Richard Eden, senior market analyst for power semiconductor discretes and modules at IHS Technology. “In contrast, GaN power transistors and GaN modules have only just recently appeared in the market. GaN is a wide-bandgap material offering similar performance benefits to SiC, but with greater cost-reduction potential. This price and performance advantage is possible, because GaN power devices can be grown on silicon substrates that are larger and less expensive than SiC,” he adds. “Although GaN transistors are now entering the market, the development of GaN Schottky diodes has virtually stopped.”
Looking ahead, it’s predicted that in the next five years, GaN-on-silicon devices will perform as well and have the same price as silicon MOSFETs and insulated-gate bipolar transistors. When this happens, the GaN power market is predicted to swell upwards of $600 million. During this same timeframe, the SiC power market, largely made up of SiC power modules, will hit $3 billion.
Add another five years, and it’s predicted that by 2025, SiC MOSFETs will generate revenue of more than $300 million, and be pretty close to Schottky diodes as the second best-selling SiC discrete power device type. SiC JFETs and SiC BJTs, both of which are considered reliable, well priced, and good performing technologies, are expected to generate much less revenue compared to SiC MOSFETs.
“While end-users now strongly prefer normally-off SiC MOSFETs, so SiC JFETs and BJTs look likely to remain specialized, niche products,” Eden says. “However, the largest revenues are expected to come from hybrid and full-SiC power modules.”
Also worth noting from the report: hybrid SiC power modules, which is the combination of Si IGBTs and SiC diodes, are predicted to generate roughly $38 million in 2015; full-SiC power modules are just 2-3 years behind in terms of the ramp-up cycle.
Each module is expected to surpass $1 billion in revenue by 2025.
To learn more, download the report from IHS, entitled SiC & GaN Power Semiconductors Report – 2016.