Richardson RFPD announced the availability and full design support capabilities for a new silicon carbide power MOSFET from Wolfspeed, a Cree Company. The 1200 V, 75 mΩ C3M0075120J features Wolfspeed’s C3M SiC MOSFET technology and is available in a compact, seven-lead TO-263-7 surface mount package. The Kelvin source Pin 2 in the TO-263-7 package supports driving the device at higher frequencies and enables highly efficient designs.
The new MOSFET features 7 mm of creepage distance between drain and source, high blocking voltage with low on-resistance, high-speed switching with low capacitances, and fast intrinsic diode with low reverse recovery (Qrr). The device is optimized for renewable energy, EV battery charger, high-voltage DC/DC converter and switch-mode power supply applications.
Key features of the C3M0075120J include:
Drain source voltage (Vds max): 1200 V
Continuous drain current (Id) at 25°C: 30 A
Rds(on): 75 mΩ
Total gate charge (Qg): 51 nC
Maximum junction temperature: 150 °C
Output capacitance (Coss): 58 pF
Reverse-recovery charge (Qrr): 220 nC
Reverse-recover time (Trr): 18 ns
For more information visit www.richardsonrfpd.com.