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Wolfspeed goes over their latest GaN-on-SiC devices at European Microwave Week

In this video Wolfspeed goes over their latest Gallium Nitride on Silicon Carbide devices at European Microwave Week for EETimes. Among their newest devices are their 2nd-generation GaN RF transistors, with 2dB more gain than previous generations. Wide-bandgap semiconductors are making major advances into the RF space, with newer higher-power devices and more efficient packages and topologies.

www.wolfspeed.com

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