Toshiba Electronics Europe has introduced a new bi-directional electrostatic discharge (ESD) protection diode DF2B7ASL which is mainly targeting interface protection in applications with minimum footprint requirement such as portable equipment. The DF2B7ASL features a snapback characteristic that can provide low clamping voltages, which together with the low dynamic resistance of the diode ensures superior protective performance to safeguard semiconductors ICs against static electricity.
Housed in a SOD-962 (SL2) package with a board-mounting footprint of only 0.32mm x 0.62mm, the device is designed for applications with restricted space, including interfaces in smart phones, wearables and other battery-powered equipment. While featuring low dynamic resistance of just 0.2Ω and a low clamping voltage (VC) of 11V at 5V signal lines (VRWM ≤ 5.5V), the DF2B7ASL still offers an electrostatic discharge voltage rating of +/-30kV in accordance with IEC61000-4-2 (contact discharge).
For more information visit www.toshiba.semicon-storage.com.