Mouser Electronics, a leading distributor with a wide selection of semiconductors and electronic components, is now stocking the LMG5200 gallium nitride (GaN) power stage from Texas Instruments (TI). The LMG5200 device delivers 25 percent lower power losses compared to silicon-based designs, enabling single-stage conversion and providing increased power density and efficiency in space-constrained, high-frequency industrial, telecom, and motor control applications.
The TI LMG5200 device, available from Mouser Electronics, is an 80 V, 10 A integrated GaN field-effect transistor (FET) power stage that consists of a high-frequency driver and two 15 milliohm GaN FETs in a half-bridge configuration. The device significantly reduces electromagnetic interference (EMI) while increasing power-stage efficiency by minimizing packaging parasitic inductances in the critical gate-drive loop. The LMG5200 device features advanced multichip packaging technology and is optimized to support power-conversion topologies with frequencies up to 5 MHz.
The LMG5200 device’s transistor–transistor logic (TTL)-compatible inputs can withstand input voltages up to 12 V regardless of the VCC voltage. This allows the inputs to be directly connected to the outputs of an analog PWM controller with up to 12 V power supply, eliminating the need for a buffer stage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.
Mouser is also stocking the LMG5200EVM-02 evaluation module, designed to provide engineers with a complete working power stage with an external PWM signal. The board can be configured as a buck converter, boost converter, or other converter topology using a half bridge. It can be used to evaluate the performance of the LMG5200 as a hard-switched converter to sample measurements such as efficiency, switching speed and voltage change over time (dV/dt).
To learn more, visit https://www.mouser.com/new/Texas-Instruments/ti-lmg5200-power-stage/.