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OptiMOS Linear FET combines a low RDS(on) with a large Safe Operating Area

Infineon Technologies AG launched the OptiMOS Linear FET series. This new product family combines the state-of-the-art on-state resistance (RDS(on)) of a trench MOSFET with the wide Safe Operating Area of a planar MOSFET. This solves the trade-off between RDS(on) and linear mode capability. The OptiMOS Linear FET can operate in the saturation region of an enhanced mode MOSFET. It is the perfect fit for hot-swap, e-fuse, and protection applications commonly found in telecom and battery management systems (BMS).

Additional information is available at infineon.com.

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