Nexperia’s NextPower 100V power MOSFETs handle up to 175°C

Nexperia, the former Standard Products division of NXP, announced its NextPower 100 V family of power MOSFETs, which delivers low reverse recovery charge (Qrr) and includes parts that are qualified to 175°C in the LFPAK56 (PowerSO8) package. NextPower 100 V MOSFETs are Nexperia’s latest generation parts recommended for high efficiency switching and high reliability applications. With 50% lower RDS(on) and strong avalanche energy rating, they are ideally suited for power supply, telecom and industrial designs, especially suiting USB-PD Type-C chargers and adaptors and 48 V DC-DC adaptors.

The devices feature low body diode losses with QRR down to 50 nano-coulombs (nC) – resulting in lower reverse recovery current (IRR), lower voltage spikes (Vpeak) and reduced ringing which allows for further optimised dead-time. The new NextPower 100 V MOSFETs are available in three packages: TO220 and I2PAK thru-hole devices, and the widely acclaimed LFPAK56 package (SMT). All package variants feature Tj(max) of 175°C, and fully meet the extended temperature requirements of IPC9592, making NextPower 100 V MOSFETs especially suitable for telecom and computing applications.

For more information visit efficiencywins.nexperia.com/efficient-products/qrr-overlooked-and-underappreciated-in-efficiency-battle.html

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