Microsemi’s extremely low inductance SP6LI package dedicated to SiC MOSFET technology

Microsemi released an extremely low inductance package dedicated to high current, low specific on-resistance (RDSon) Silicon Carbide (SiC) MOSFET power modules. The new package, developed specifically for the company’s SP6LI product family, is designed to offer 2.9 nanohenry (nH) stray inductance suitable for SiC MOSFET technology and enable high current, high switching frequency as well as high efficiency. The SP6LI power modules in the new packaging, along with other SiC power modules from Microsemi’s existing product family, will be showcased June 5-7 in hall 6, booth 318 at PCIM Europe 2018, held at the Exhibition Centre in Nuremberg, Germany.

Microsemi’s SP6LI product family features five standard modules, offering phase leg topology ranking from 1200 volts (V), 210 amperes (A) to 586 A at a case temperature (Tc) of 80 degrees Celsius to 1700 V, 207 A at Tc of 80 degrees Celsius. Offering higher power density and a compact form factor, the power modules can be used in switch mode power supplies and motor control in a variety of industrial, automotive, medical, aerospace and defense applications.

SP6LI power modules from Microsemi feature a phase leg topology made of SiC power MOSFETs and SiC Schottky diodes, and offer an extremely low RDSon down to 2.1 mOhms per switch and an internal thermistor for temperature monitoring. They also offer screw-on terminals for both signal and power connections, as well as isolated and high thermal conductivity substrates (Aluminum Nitrate as a standard and Silicon Nitride as an option) for improved thermal performance. In addition, the standard copper base plate can be replaced as an option with Aluminum Silicon Carbide (AlSiC) material enabling higher power cycling capabilities.

Other key features include:
• Optimized layout for multi-SiC MOSFET and diode chips assembly in phase leg topology;
• Symmetrical design to accept up to 12 SiC MOSFET chips in parallel per switch;
• Each die in parallel with its own gate series resistor for homogenous current balancing;
• High current capability up to 600 A at very fast switching frequency; and
• Optional mix of assembly materials to better address different markets and applications.

Demonstrations at PCIM June 5-7 in Hall 6, Booth 318
Microsemi’s product experts will be at the company’s booth at PCIM during show hours to showcase its next-generation SiC solutions, including its new low inductance SiC-based SP6LI power module. In addition, the company’s recently announced next-generation 1200 V, 40 mOhm SiC MOSFET device and 1200V, 10/30/50A SiC diode product will be showcased along with a power factor correction (PFC) reference design. For more information or to request a meeting at the show, visit https://www.microsemi.com/details/346-pcim-europe.

For more information visit www.microsemi.com/product-directory/silicon-carbide-sic/4995-sic-power-modules

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