GLF Integrated Power, a leading producer of innovative load switch solutions for wearable electronics, introduced the GLF73510 IQSmart IC, designed to virtually eliminate wearable and IoT device battery discharge during standby or deep-sleep operation. The GLF73510 consumes an industry-leading ultra-low leakage current (ISD) of 2 nA (typ.), as much as 1,000 times less than other manufacturers’ chips commonly used in this application.
Applications for wearable and smaller IoT battery powered devices are expanding rapidly. Market forces continue to demand hardware solutions with more features and longer battery life at a lower cost. Surprisingly, the semiconductor industry has been slow to address the specific requirements of smaller battery-powered devices and consider existing ICs, developed for mobile applications with much higher battery densities, as a good fit.
Load switches currently used to protect wearables and small IoT device batteries are usually designed for much larger devices, where standby or deep-sleep battery drain was not a serious concern, so the GLF73510 is designed from the ground up to virtually eliminate battery deep discharge during product shipment, storage, and stand-by. The GLF73510 is a high-efficiency 2A-rated, bi-directional switch with a turn-on threshold to prevent a battery from deep discharge. The compact IC is provided in a wafer-level chip scale package (WLCSP) measuring 0.97 mm x 0.97 mm x 0.55 mm.
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