Dialog Semi offers DA8801 integrated GaN power FET for fast charging power adapters

Dialog Semiconductor is demonstrating its first GaN power IC product offering, using a TSMC 650-V GaN-on-Si process technology. The DA8801 together with Dialog’s patented digital Rapid Charge power conversion controllers enable smaller and higher power density adapters compared to traditional Si field-effect transistor (FET) based designs.

Dialog is initially targeting the fast charging smartphone and computing adapter segment with its GaN solutions. The half-bridge integrates building blocks, including gate drives and level shifting circuits, with 650 V power switches that reduces power losses by up to 50% with up to 94% power efficiency. The GaN technology allows a reduction in the size of power electronics by up to 50%. A typical 45-W adapter design will fit into a 25 W form factor. The power adapter will be available in sample quantities in Q4 2016. Find more information at: http://www.dialog-semiconductor.com/products/DA8801


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