A range of 2 – 40 A 1,200 V SiC junction barrier Schottky (JBS) diodes enable a wider range of applications that benefit from the high switching efficiency, fast recovery, and consistent temperature characteristics of SiC technology. The robust devices feature low forward voltage (VF) that enable high efficiency and reliability using diodes with lower current rating. The SiC technology targets cost-conscious applications including solar inverters, industrial motor drives, home appliances, and power adapters.
The higher efficiency margin provided by diode’s lower VF, suits automotive equipment such as on-board battery chargers and charging stations for plug-in hybrid or electric vehicles. The overall robust electrical performance also targets telecom and server power supplies, high-power industrial switched-mode power supplies and motor drives, uninterruptible power supplies, and large solar inverters.
The low VF also helps reduce operating temperature and extend application lifetime. The 1200V SiC diode family covers current ratings from 2 to 40 A, including automotive-qualified devices, in surface-mount DPAK High-Voltage and D²PAK, or through-hole TO-220AC and TO-247LL (Long-Lead) packages. Pricing starts at $2.50 for the 10 A STPSC10H12D in TO-220AC, for orders of 1,000 pieces.
ST Microelectronics: www.st.com