1.2 kV Half Bridge Gate Driver

IXYS Corporation together with its subsidiary, IXYS Integrated Circuits Division (ICD), INC., released its newest available half-bridge gate driver IC that can drive both high side and low side IGBTs and MOSFETs. The IX2120B can operate up to 1200 V and is capable of driving both N-channel MOSFET and IGBT with the given maximum voltage level.

According to Dr. Nathan Zommer, CEO and CTO of IXYS Corporation,“this product complements the full selection of power driver IC’s that we have developed and introduced to the power management market in the last 3 years. It is designed and produced in our internal wafer fabrication facility on the proven advanced SOI process.”

The IX2120B is a very robust IC that was manufactured using IXYS Integrated Circuits Division’s (ICD) advanced BCDMOS on SOI technology. This technology is based on layered silicon-insulator-silicon substrate that helps improve the performance of semiconductor devices compared to conventional products. With the SOI process, the driver’s UVLO circuit prevents the MOSFET or IGBT from turning on until supply voltage is sufficient. The device then becomes immune to negative transients and noise generation from high dV/dt power pulses.

The IX2120B accepts 3.3 V and 5 V at its input as well as logic input voltages. Three logic input leads –  HIN, LIN, and SD –  determine the state of the two gate driver outputs, HO and LO. The HO can be controlled by the HIN using a high voltage interface composed of a two-stage bootstrap responsible for supplying current to the high side and mid-level circuitry.

The IX2120B is also capable of driving different configurations of power discrete MOSFETs and IGBTs applicable for any design requirements. Such applications include motor drives, high voltage inverters, uninterrupted power supplies (UPS), and DC/DC converters.

The IX2120B is available in a 28-pin SOIC tube and reel packaging.

The following are the best features the IX2120B can offer:

  • Floating Channel for Bootstrap Operation to +1200V
  • Outputs Capable of Sourcing and Sinking 2A
  • Gate Drive Supply Range From 15V to 20V
  • Enhanced Robustness due to SOI Process
  • Tolerant to Negative Voltage Transients: dV/dt Immune
  • 3.3V Logic Compatible
  • Undervoltage Lockout for Both High-Side and Low-Side Output

IXYS also offers a unique portfolio of power MOSFETs and IGBTs suitable for use in many large power conversion systems. They are also helpful in applications that greatly improve efficiency, system reliability, complexity, cost and competitiveness of designs in the marketplace.

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